RIR Power Electronics expands manufacturing of 1200V Silicon Carbide (SiC) Diodes in Collaboration with Pro Asia Semiconductor Corporation, Taiwan
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RIR Power Electronics has successfully started producing and shipping 1200V Silicon Carbide (SiC) Schottky Barrier Diodes (2A to 60A range) from a contract fab at Pro Asia Semiconductor Corporation (PASC) in Taiwan. The technology is based on IP acquired from US-based Sicamore Semi in October 2024, and has been scaled up from 4-inch to 6-inch wafer production with help from Vortex Semi (USA) and PASC. The company has already secured purchase orders from Richardson Electronics (USA) and Ankit Plastics (India), serving automotive, industrial, renewable energy and defence markets. This Taiwan production is a bridge to RIR's upcoming ₹618 crore SiC semiconductor plant in Odisha, India. The company's market cap is approximately ₹2,072 crore as of the announcement date.
Positive for shareholders — this represents a tangible commercial milestone with initial orders already in hand, validates RIR's SiC technology on 6-inch wafers, and de-risks the larger Odisha facility ramp-up. The move also opens faster access to high-growth South East Asian SiC markets while supporting India's Make in India semiconductor push.